Methods of Manufacturing a Field Effect Transistor Using Carbon Nanotubes and Field Effect Transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMarcus Johannes Henricus VAN DAL, Timothy VASEN, Gerben DOORNBOS
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Abstract
In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.
Claims20
A method of forming a gate-all-around field effect transistor (“GAA FET”), the method comprising:
- forming a vertical structure over a substrate, the vertical structure including a plurality of carbon nanotubes (“CNT”) each adjacent to a support layer;
- removing a first portion of the support layer adjacent to first portions of the CNTs;
- forming a gate structure adjacent to the first portions of the CNTs;
- removing a second portion of the support layer adjacent to second regions of the CNTs;
- forming a dielectric structure adjacent to the second portions;
- and
- forming a source or drain structure in contact with the second portions of the CNTs, the dielectric structure between the source or drain structure and the gate structure.
A structure, comprising:
- a substrate;
- a carbon nanotube over the substrate, the carbon nanotube including a channel portion and a source or drain extension portion extending from the channel portion;
- a gate structure adjacent to the channel portion of the carbon nanotube;
- an inner spacer structure adjacent to the source or drain extension portion of the carbon nanotube;
- and
- a source or drain structure contacting the source or drain extension portion, the inner spacer structure laterally between the gate structure and the source or drain structure.
A device, comprising:
- a substrate;
- a plurality of carbon nanotubes over the substrate, the plurality of carbon nanotubes spaced away from one another and each including a channel portion and a source or drain extension portion extending from the channel portion;
- a gate structure adjacent to channel portions of the plurality of carbon nanotubes;
- a spacer structure adjacent to source or drain extension portions of the plurality of carbon nanotubes, the spacer structure laterally adjacent to the gate structure;
- and
- a source or drain structure laterally adjacent to the spacer structure, the spacer structure laterally between the gate structure and the source or drain structure.
Dependencies are inferred from the claim text.