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US 7,544,967 B2Granted
Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
AssigneeMassachusetts Institute of Technology
InventorsIl-Doo Kim, Harry L. Tuller
Life of this patent
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Abstract
A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.
Claims20
A low voltage operating thin film transistor (TFT) structure comprising:
- a source electrode;
- a drain electrode;
- a gate electrode;
- and
- a gate insulator that is coupled to said source electrode, drain electrode, and gate electrode, said gate insulator completely surrounds said gate electrode with room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage, said gate insulator comprises amorphous or partially nanocrystalline films having at least one material selected from the group consisting of Bi1.5Zn1.0M1.5O7 (M=Ta, Sb), or 0.1˜5% Ni, Mg, or Mn doped (Ba1−xSrx)TiO3 at room temperature.
2 more elements
A method of forming a thin film transistor (TFT) structure comprising:
- forming a source electrode;
- forming a drain electrode;
- forming a gate electrode;
- and
- forming a gate insulator that is coupled to source electrode, drain electrode, and gate electrode, said gate insulator completely surrounds said gate electrode with room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltages, said gate insulator comprises amorphous or partially nano crystalline films having at least one material selected from the group consisting of Bi1.5Zn1.0M1.5O7 (M=Ta, Sb), or 0.1˜5% Ni, Mg, or Mn doped (Ba1−xSrx)TiO3 at room temperature.
2 more elements
Dependencies are inferred from the claim text.