H10H 20/816
Having carrier transport control structures
Official title: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
H10H20/816 (Having carrier transport control structures) appears on 1,906 US grants and 2,307 published applications in this corpus.
Search patents in H10H- Granted patents
- 1,906
- Published applications
- 2,307
- Assignees
- 476
- Inventors
- 3,241
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 5 | 0 |
| 1992 | 4 | 0 |
| 1993 | 4 | 0 |
| 1994 | 9 | 0 |
| 1995 | 10 | 0 |
| 1996 | 13 | 0 |
| 1997 | 12 | 0 |
| 1998 | 16 | 0 |
| 1999 | 16 | 0 |
| 2000 | 17 | 0 |
| 2001 | 26 | 3 |
| 2002 | 28 | 27 |
| 2003 | 22 | 32 |
| 2004 | 25 | 49 |
| 2005 | 31 | 40 |
| 2006 | 39 | 59 |
| 2007 | 22 | 66 |
| 2008 | 29 | 48 |
| 2009 | 30 | 49 |
| 2010 | 43 | 76 |
| 2011 | 39 | 82 |
| 2012 | 63 | 83 |
| 2013 | 82 | 84 |
| 2014 | 86 | 104 |
| 2015 | 92 | 129 |
| 2016 | 129 | 131 |
| 2017 | 124 | 136 |
| 2018 | 93 | 130 |
| 2019 | 139 | 124 |
| 2020 | 114 | 116 |
| 2021 | 90 | 116 |
| 2022 | 79 | 153 |
| 2023 | 73 | 144 |
| 2024 | 88 | 125 |
| 2025 | 121 | 122 |
| 2026 | 77 | 79 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Light emitting element and production method therefor29 Sep 2026US 12,751,128 B2Toyoda Gosei Co., Ltd.
- Light emitting diodes with aluminum-containing layers integrated therein and associated methods15 Sep 2026US 12,740,186 B2Google Inc.
- Semiconductor light emitting element and manufacture method thereof15 Sep 2026US 12,740,190 B2Xiamen Silan Advanced Compound Semiconductor Co., Ltd
- Light emitting device having one current limiting layer with higher aluminum content than another current limiting layer15 Sep 2026US 12,740,191 B2AUO Corporation
- Light-emitting device and light-emitting apparatus8 Sep 2026US 12,733,296 B2Anhui Sanan Optoelectronics Co., Ltd.
- Light emitting device8 Oct 2026US 2026/0314117 A1Seoul Viosys Co., Ltd.
- Surface-emitting element1 Oct 2026US 2026/0302729 A1Sony Semiconductor Solutions Corporation
- Semiconductor device1 Oct 2026US 2026/0305020 A1Epistar Corporation
- Light emitting diode and manufacturing method thereof1 Oct 2026US 2026/0305021 A1Taiwan-Asia Semiconductor Corporation
- Display device and method of fabricating the same24 Sep 2026US 2026/0293372 A1LG Display Co., Ltd.
Most cited
By later US patents
- Formation of insulating aluminum oxide in semiconductor substrates498US 6,635,559 B2Spire Corporation · 2003
- Light-emitting semiconductor device462US 5,696,389 AKabushiki Kaisha Toshiba · 1997
- Method of production of light emitting diodes438US 4,966,862 ACree Research, Inc. · 1990
- Wafer bonding of light emitting diode layers336US 5,376,580 AHewlett-Packard Company · 1994
- III-Phospide and III-Arsenide flip chip light-emitting devices299US 6,784,463 B2Lumileds Lighting U.S., LLC · 2004