Light emitting diodes with aluminum-containing layers integrated therein and associated methods
AssigneeGoogle Inc.
InventorsYing-Lan Chang, Benjamin Leung, Miao-Chan Tsai, Richard Peter Schneider, Sheila Hurtt, Gang He
Life of this patent
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Abstract
A light-emitting diode (LED) structure includes an active region that has at least one aluminum-containing quantum well (QW) stack that emits light from the LED structure when activated. The LED structure exhibits a modified internal quantum efficiency value, which is higher than a LED structure that does not include aluminum within a QW stack. The LED structure also exhibits a modified peak wavelength, which is longer than an unmodified peak wavelength of the unmodified LED structure.
Claims29
A display, comprising:
- a plurality of microLED structures monolithically formed on a substrate template as an array, the plurality of microLED structures including a blue microLED structure configured to emit light at a blue wavelength, a green microLED structure configured to emit light at a green wavelength, and a red microLED structure configured to emit light at a red wavelength,
- a microLED structure of the plurality of microLED structures including:
- a bulk or prep layer formed on a semiconductor template;
- an active region formed on the bulk or prep layer and including:
- a first barrier layer formed on the bulk or prep layer;
- at least one active quantum well (QW) stack including aluminum formed on the first barrier layer;
- and
- a second barrier layer formed on the at least one active QW stack;
- and
- at least one p-layer formed on the active region,
- wherein the active region emits light from the microLED structure when the at least one active QW stack is driven by an injection current.
A method for forming a red light emitting diode (LED), comprising:
- growing a first barrier layer on a semiconductor template;
- growing a nitride-based quantum well (QW) on the first barrier layer, the nitride-based QW including indium and aluminum and being configured to emit red light at a wavelength in a range 590 nm to 760 nm;
- growing a second barrier layer on the nitride-based QW;
- and
- growing a p-layer on the second barrier layer.
A light-emitting diode (LED) structure, comprising:
- a semiconductor template;
- an active region formed on the semiconductor template and including:
- a first barrier layer formed on the semiconductor template;
- a nitride-based quantum well (QW) formed on the first barrier layer, and comprising indium and aluminum;
- and
- a second barrier layer formed on the nitride-based QW;
- and
- a p-layer formed on the active region,
- wherein the nitride-based QW is configured to emit red light with a wavelength between 590 nm and 760 nm, when the LED structure is driven by an injection current.
Dependencies are inferred from the claim text.