Light emitting device

Abstract

A light emitting device includes a first semiconductor layer doped with a first dopant, an intermediate layer disposed on the first semiconductor layer, an active layer disposed on the intermediate layer, an electron blocking layer disposed on the active layer, and a second semiconductor layer disposed on the electron blocking layer and doped with a second dopant. The intermediate layer includes indium, the active layer includes a well layer and a barrier layer and emits green light, and the electron blocking layer includes aluminum. The intermediate layer includes a first intermediate layer and a second intermediate layer, and the first intermediate layer and the second intermediate layer are stacked alternately. The first intermediate layer has an indium content higher than that of the second intermediate layer and lower than that of the active layer.

Dependencies are inferred from the claim text.