Light emitting device having one current limiting layer with higher aluminum content than another current limiting layer

A light emitting device, comprising:

• an active layer;
• a first semiconductor layer disposed at a first side of the active layer;
• a first contact layer disposed at a side of the first semiconductor layer away from the active layer;
• a first current limiting layer disposed between the first contact layer and the active layer and provided with a first non-oxidizing region and a first oxidizing region located around the first non-oxidizing region, and the first current limiting layer has a first surface facing the active layer and a second surface away from the first surface, wherein the first oxidizing region of the first current limiting layer is extended from the first surface to the second surface, an oxygen content of the first oxidizing region is greater than an oxygen content of the first non-oxidizing region, and the first current limiting layer is disposed between the active layer and the first semiconductor layer;
• and
• another first current limiting layer disposed between the first contact layer and the first semiconductor layer, wherein an aluminum content of the first current limiting layer is higher than an aluminum content of the another first current limiting layer.