H10H 20/815
Having stress relaxation structures
Official title: having stress relaxation structures, e.g. buffer layers
H10H20/815 (Having stress relaxation structures) appears on 1,571 US grants and 2,018 published applications in this corpus.
Search patents in H10H- Granted patents
- 1,571
- Published applications
- 2,018
- Assignees
- 459
- Inventors
- 2,645
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 2 |
| 2002 | 5 | 10 |
| 2003 | 10 | 13 |
| 2004 | 9 | 7 |
| 2005 | 7 | 19 |
| 2006 | 12 | 30 |
| 2007 | 5 | 30 |
| 2008 | 9 | 44 |
| 2009 | 20 | 72 |
| 2010 | 36 | 60 |
| 2011 | 54 | 91 |
| 2012 | 53 | 120 |
| 2013 | 83 | 107 |
| 2014 | 123 | 155 |
| 2015 | 154 | 176 |
| 2016 | 151 | 132 |
| 2017 | 110 | 127 |
| 2018 | 116 | 125 |
| 2019 | 142 | 119 |
| 2020 | 86 | 86 |
| 2021 | 77 | 102 |
| 2022 | 55 | 78 |
| 2023 | 56 | 94 |
| 2024 | 64 | 107 |
| 2025 | 61 | 70 |
| 2026 | 65 | 42 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- High electron mobility transistor epitaxial structure that includes carbon doped nitride layers6 Oct 2026US 12,757,526 B2GlobalWafers Co., Ltd.
- LED module, LED source substrate, display panel, and display apparatus22 Sep 2026US 12,745,673 B2Shanghai Tianma Micro-Electronics Co., Ltd.
- Light emitting diode epitaxial structure based on aluminum gallium nitride material and its manufacturing method15 Sep 2026US 12,740,193 B2Xuzhou Liyu Advanced Technology Co., Ltd.
- Light-emitting device and light-emitting apparatus8 Sep 2026US 12,733,296 B2Anhui Sanan Optoelectronics Co., Ltd.
- Display device having an embedded shielding layer flexible substrate8 Sep 2026US RE51,027 E1Samsung Display Co., Ltd.
- Optoelectronic device and method for processing the same24 Sep 2026US 2026/0293373 A1
- Optoelectronic substrate and light source and method of manufacturing thereof24 Sep 2026US 2026/0293379 A1Ingantec Corporation
- Method of manufacturing light emitting device3 Sep 2026US 2026/0262331 A1Samsung Electronics Co., Ltd.
- Light-emitting diode3 Sep 2026US 2026/0262335 A1Boe Hc Semitek (Suzhou) Co., Ltd.
- Method for processing a plurality of optoelectronic devices and optoelectronic device3 Sep 2026US 2026/0262336 A1ams-OSRAM International GmbH
Most cited
By later US patents
- Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device494US 8,179,938 B2Samsung Electronics Co., Ltd. · 2012
- Light-emitting device and method of manufacturing the same490US 7,759,140 B2Samsung LED Co., Ltd. · 2010
- Gallium nitride materials and methods249US 6,617,060 B2Nitronex Corporation · 2003
- Method of fabricating vertical structure LEDs183US 7,928,465 B2LG Electronics Inc. · 2011
- Semiconductor light emitting device181US 9,172,008 B2Samsung Electronics Co., Ltd. · 2015