Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device

A light-emitting element comprising:

• a conductive substrate;
• a first electrode having a bowl shape and formed on the conductive substrate;
• a light-emitting structure including a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type sequentially formed in the first electrode;
• a buffer layer formed on the light-emitting structure;
• and
• a second electrode formed on the buffer layer,
• wherein an uneven pattern is formed on the buffer layer, the second conductive pattern is conformally formed along the buffer layer, and the light-emitting pattern is conformally formed along the second conductive pattern.

A light emitting element comprising:

• a substrate;
• a light emitting structure on the substrate, wherein the light emitting structure comprises:
• a first conductive layer of P-type material comprising A1GaN;
• a light emitting layer on the first conductive layer, wherein the light emitting layer comprises a multiple quantum well structure;
• and
• a second conductive layer of N-type material on the light emitting layer, wherein the second conductive layer has an uneven surface pattern thereon and wherein the second conductive layer comprises InGaN;
• an insulating layer between the substrate and the first conductive layer, said insulating layer having at least one opening therethrough, wherein first and second biases are respectively applied to the first and second conductive layers through the at least one opening;
• a first metal layer electrically connected through the at least one opening to the first conductive layer, wherein the first metal layer comprises an Ag layer and an Au layer;
• and
• a second metal layer electrically connected through the at least one opening to the second conductive layer, wherein the second metal layer comprises Al and Au.