Method of manufacturing light emitting device

A method of manufacturing a light emitting device, the method comprising:

• providing a substrate;
• forming a first semiconductor layer on the substrate;
• forming a dislocation blocking layer on the first semiconductor layer;
• etching the dislocation blocking layer to form a plurality of holes in the dislocation blocking layer;
• etching the first semiconductor layer to form a plurality of recesses in the first semiconductor layer wherein the plurality of recesses are overlapped with the plurality of holes along a vertical direction;
• growing a second semiconductor to fill the plurality of holes and the plurality of recesses and forming a plurality voids in the plurality of recesses in the first semiconductor layer;
• growing further the second semiconductor to form a second semiconductor layer on the first semiconductor layer and the dislocation blocking layer;
• forming a third semiconductor layer on the second semiconductor layer;
• forming an active layer on the third semiconductor layer;
• and
• forming a fourth semiconductor layer on the active layer.

A method of manufacturing a light emitting device, the method comprising:

• forming a light emitting stack which comprises:
• providing a substrate;
• forming a first semiconductor layer on the substrate;
• forming a dislocation blocking layer on the first semiconductor layer;
• etching the dislocation blocking layer to form a plurality of holes in the dislocation blocking layer;
• etching the first semiconductor layer to form a plurality of recesses in the first semiconductor layer wherein the plurality of recesses are overlapped with the plurality of holes along a vertical direction;
• growing a second semiconductor to fill the plurality of holes and the plurality of recesses and forming a plurality voids in the plurality of recesses in the first semiconductor layer;
• growing further the second semiconductor to form a second semiconductor layer on the first semiconductor layer and the dislocation blocking layer;
• forming a third semiconductor layer on the second semiconductor layer;
• forming an active layer on the third semiconductor layer;
• and
• forming a fourth semiconductor layer on the active layer;
• removing a portion of the light emitting stack to form an isolation opening and a pad opening;
• forming an isolation layer on the isolation opening and the pad opening;
• forming first and second electrodes on the isolation layer;
• forming a buried insulating layer on the first and second electrodes;
• removing the substrate to form a plurality of barrier structures and a plurality of openings between the plurality of barrier structures;
• forming a fluorescent layer in the plurality of openings;
• and
• removing some portion of the substrate in a pad region to expose the pad opening.