Semiconductor light emitting device
AssigneeSamsung Electronics Co., Ltd.
InventorsKyung Wook Hwang, Jung Sub Kim
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Abstract
A semiconductor light emitting device includes a light-transmissive substrate, a light-transmissive buffer layer disposed on the light-transmissive substrate, and a light emitting structure. The light-transmissive buffer layer includes a first layer and a second layer having different refractive indices and disposed alternately at least once. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer.
Claims18
A semiconductor light emitting device, comprising:
- a light-transmissive substrate;
- a light-transmissive buffer layer disposed on the light-transmissive substrate and including a plurality of first layers and a plurality of second layers having different refractive indices and disposed alternately,
- wherein the plurality of first layers and the plurality of second layers have different thicknesses;
- and
- a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer.
A semiconductor light emitting device comprising:
- a light-transmissive buffer layer including a plurality of first layers and a plurality of second layers disposed alternately having different refractive indices laminated therein,
- wherein the plurality of first layers and the plurality of second layers have different thicknesses;
- and
- a light emitting structure disposed on the buffer layer and including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween.
A semiconductor light emitting device, comprising:
- a light-transmissive buffer layer including a plurality of first layers and a plurality of second layers having different refractive indices and disposed alternately
- wherein the plurality of first layers and the plurality of second layers have different thicknesses;
- a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer;
- a first electrode disposed on an exposed region of the first conductivity-type semiconductor layer;
- and
- a wavelength conversion unit disposed on the light-transmissive buffer layer.
Dependencies are inferred from the claim text.