H10F 30/24
The devices having only two potential barriers
Official title: the devices having only two potential barriers, e.g. bipolar phototransistors
H10F30/24 (The devices having only two potential barriers) appears on 363 US grants and 240 published applications in this corpus.
Search patents in H10F- Granted patents
- 363
- Published applications
- 240
- Assignees
- 203
- Inventors
- 682
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 3 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 6 | 0 |
| 1981 | 5 | 0 |
| 1982 | 7 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 2 | 0 |
| 1986 | 6 | 0 |
| 1987 | 8 | 0 |
| 1988 | 4 | 0 |
| 1989 | 7 | 0 |
| 1990 | 5 | 0 |
| 1991 | 8 | 0 |
| 1992 | 16 | 0 |
| 1993 | 7 | 0 |
| 1994 | 8 | 0 |
| 1995 | 4 | 0 |
| 1996 | 8 | 0 |
| 1997 | 6 | 0 |
| 1998 | 5 | 0 |
| 1999 | 8 | 0 |
| 2000 | 3 | 0 |
| 2001 | 3 | 0 |
| 2002 | 3 | 11 |
| 2003 | 6 | 5 |
| 2004 | 7 | 6 |
| 2005 | 2 | 7 |
| 2006 | 5 | 3 |
| 2007 | 6 | 12 |
| 2008 | 4 | 4 |
| 2009 | 3 | 8 |
| 2010 | 8 | 12 |
| 2011 | 7 | 9 |
| 2012 | 9 | 5 |
| 2013 | 7 | 6 |
| 2014 | 11 | 13 |
| 2015 | 12 | 14 |
| 2016 | 14 | 12 |
| 2017 | 15 | 20 |
| 2018 | 16 | 17 |
| 2019 | 13 | 13 |
| 2020 | 17 | 13 |
| 2021 | 15 | 12 |
| 2022 | 15 | 11 |
| 2023 | 6 | 8 |
| 2024 | 12 | 10 |
| 2025 | 4 | 3 |
| 2026 | 4 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Versatile anti-ambipolar phototransistors based on mixed-dimensional heterojunctions25 Aug 2026US 12,720,877 B2City University of Hong Kong
- Electromagnetic radiation detector with reduced dark current16 Jun 2026US 12,660,363 B2Apple Inc.
- Near-omnidirectional InP nanowire-HBT photodetectors28 Apr 2026US 12,615,855 B1Northrop Grumman Systems Corporation
- Current-assisted photonic demodulator with improved performances including intermediate electrodes17 Mar 2026US 12,578,619 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Lateral phototransistor9 Dec 2025US 12,495,623 B2GLOBALFOUNDRIES U. S. Inc.
- Technologies for micro-led optical interconnects20 Aug 2026US 2026/0247737 A1
- Short-wave dual-band infrared detector based on indium phosphide substrate and fabrication method thereof9 Jul 2026US 2026/0198105 A1Institute of Semiconductors, Chinese Academy Science
- Phototransistor25 Jun 2026US 2026/0182050 A1Taiwan-Asia Semiconductor Corporation
- Ultra-Wide-Band-Gap Semiconductor Optical Switches and Photodetectors28 May 2026US 2026/0150430 A1
- Optically quenchable carbon-doped gallium nitride photoconductive semiconductor switches15 Jan 2026US 2026/0020356 A1
Most cited
By later US patents
- Semiconductor device having a semiconductor region in which a band gap being continuously graded273US 5,093,704 ACanon Kabushiki Kaisha · 1992
- Semiconductor structure comprising active zones267US 7,692,202 B2AZUR SPACE Solar Power GmbH · 2010
- Multi-spectrum photodiode devices84US 4,238,760 ARecognition Equipment Incorporated · 1980
- Two terminal multi-band infrared radiation detector77US 5,113,076 ASanta Barbara Research Center · 1992
- Infra red detectors65US 4,679,063 AThe Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland · 1987