Current-assisted photonic demodulator with improved performances including intermediate electrodes
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsAbdelkader Aliane, Hacile Kaya, Quentin Durlin, Jean-Michel Hartmann, Luc Andre
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Abstract
A current-assisted photonic demodulator includes a detection portion having two doped modulation regions and two doped collection regions, lying flush with a first face covered by a dielectric layer. Electrodes pass through the dielectric layer and come into contact with the doped regions. In addition, intermediate electrodes partly pass through the dielectric layer and are spaced apart from the first face by a non-zero distance, each being located, in projection in a main plane, between one of the doped modulation regions and the adjacent doped collection region.
Claims14
A current-assisted photonic demodulator configured to detect light radiation of interest, including:
- a detection portion, extending vertically between a first face and a second face both parallel to a main plane, and including:
- at least two p-doped regions, intended to generate and modulate a drift current in the detection portion, lying flush with the first face and located on either side of a central zone of the first face;
- at least two n-doped regions, configured to collect the minority charge carriers photogenerated during the absorption of the light radiation of interest in the detection portion, lying flush with the first face and located adjacent to the p-doped regions;
- a dielectric passivation layer, produced from an electrically insulating material, and covering the first face;
- modulation electrodes, passing through the dielectric passivation layer and in contact with the p-doped regions;
- and collection electrodes, passing through the dielectric passivation layer and in contact with the n-doped regions;
- intermediate electrodes, intended to be negatively biased, partly passing through the dielectric passivation layer and spaced apart from the first face by a non-zero distance, each being located, in projection in the main plane, between one of the p-doped regions and the adjacent n-doped region.
Dependencies are inferred from the claim text.