Back to results
US 12,660,363 B2Granted
Electromagnetic radiation detector with reduced dark current
AssigneeApple Inc.
InventorsMatthew T. Morea, Daniel Mahgerefteh, Romain F. Chevallier, Tomas Sarmiento
Life of this patent
Estimating the term…
Abstract
An electromagnetic radiation detector includes one or more dark current isolation regions provided to position one or more PN junctions formed in the device away from areas that may exacerbate dark current when a depletion region is present.
Claims20
A method for manufacturing an electromagnetic radiation detector, comprising:
- providing a base structure defining a first surface of the base structure, a second surface of the base structure opposite the first surface of the base structure, and a sidewall between the first surface and the second surface of the base structure, wherein providing the base structure comprises:
- providing an anode layer defining the second surface of the base structure;
- and
- inverting a conductivity type of one or more regions in the anode layer such that the anode layer comprises:
- a dark current isolation region having a first conductivity type;
- and
- a conduction region having a second conductivity type opposite the first conductivity type;
- and
- after inverting the conductivity type of the one or more regions in the anode layer, providing a mesa layer stack on the base structure, wherein providing the mesa layer stack comprises providing an electromagnetic radiation absorber layer having the first conductivity type on the second surface of the base structure;
- and
- patterning the mesa layer stack to provide a mesa structure, the mesa structure defining a first surface of the mesa structure disposed on the second surface of the base structure, a second surface of the mesa structure opposite the first surface of the mesa structure, and a sidewall between the first surface and the second surface of the mesa structure, wherein:
- the electromagnetic radiation absorber layer defines the first surface of the mesa structure and a portion of the sidewall of the mesa structure;
- the sidewall of the mesa structure is in contact with the dark current isolation region of the anode layer at the second surface of the base structure;
- and
- an interior portion of the mesa structure is in contact with the conduction region of the anode layer at the second surface of the base structure.
12 more elements
An electromagnetic radiation detector, comprising:
- a mesa structure defining a first surface, a second surface opposite the first surface, and a sidewall between the first surface and the second surface, the mesa structure comprising:
- an electromagnetic radiation absorber layer defining the first surface of the mesa structure and a portion of the sidewall of the mesa structure, the electromagnetic radiation absorber layer having a first conductivity type;
- and
- a base structure defining a first surface, a second surface opposite the first surface, and a sidewall between the first surface and the second surface, wherein the first surface of the mesa structure is disposed on the second surface of the base structure and the base structure comprises:
- an anode layer defining the second surface of the base structure, the anode layer comprising:
- a dark current isolation region in contact with the sidewall of the mesa structure at the second surface of the base structure, the dark current isolation region having the first conductivity type;
- and
- a conduction region in contact with an interior portion of the mesa structure at the second surface of the base structure, the conduction region having a second conductivity type opposite the first conductivity type.
5 more elements
A method for manufacturing an electromagnetic radiation detector defining a first surface, a second surface opposite the first surface, and a sidewall between the first surface and the second surface, the method comprising:
- providing an anode layer;
- inverting a conductivity type of one or more regions in the anode layer such that the anode layer comprises:
- a dark current isolation region in contact with the sidewall, the dark current isolation region having a first conductivity type;
- and
- a conduction region in an interior portion of the anode layer, the conduction region having a second conductivity type opposite the first conductivity type;
- and
- after inverting the conductivity type of the one or more regions in the anode layer, providing an electromagnetic radiation absorber layer on a surface of the anode layer, the electromagnetic radiation absorber layer defining at least a portion of the sidewall and being in contact with the conduction region of the anode layer and having the first conductivity type.
4 more elements
Dependencies are inferred from the claim text.