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US 2026/0182050 A1Published application
Phototransistor
AssigneeTaiwan-Asia Semiconductor Corporation
InventorsCheng-Chang Wei, Hou-Jun Wu
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Abstract
A phototransistor is provided. The phototransistor comprises a first conductivity-type substrate, a second conductivity-type base region, and a first conductivity-type patterned emitter region. The second conductivity-type base region is disposed within the first conductivity-type substrate. The first conductivity-type patterned emitter region includes multiple emitter sub-regions, each independently located within the second conductivity-type base region to increase electron injection pathways.
Claims20
A phototransistor, comprising:
- a first conductivity-type substrate;
- a second conductivity-type base region disposed within the first conductivity-type substrate;
- and
- a first conductivity-type patterned emitter region comprising a plurality of emitter sub-regions, each independently disposed within the second conductivity-type base region to increase electron injection pathways.
1 more element
A phototransistor, comprising:
- a substrate;
- a base region disposed within the substrate;
- and
- a patterned emitter region having a plurality of discontinuous PN junctions with the base region to increase electron injection pathways.
1 more element
Dependencies are inferred from the claim text.