H10F 30/245
Bipolar phototransistors
Official title: {Bipolar phototransistors}
H10F30/245 (Bipolar phototransistors) appears on 232 US grants and 143 published applications in this corpus.
Search patents in H10F- Granted patents
- 232
- Published applications
- 143
- Assignees
- 122
- Inventors
- 387
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 3 | 0 |
| 1985 | 2 | 0 |
| 1986 | 5 | 0 |
| 1987 | 6 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 5 | 0 |
| 1991 | 7 | 0 |
| 1992 | 13 | 0 |
| 1993 | 5 | 0 |
| 1994 | 6 | 0 |
| 1995 | 3 | 0 |
| 1996 | 8 | 0 |
| 1997 | 6 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 3 | 9 |
| 2003 | 6 | 3 |
| 2004 | 5 | 5 |
| 2005 | 1 | 5 |
| 2006 | 4 | 1 |
| 2007 | 3 | 7 |
| 2008 | 2 | 4 |
| 2009 | 1 | 6 |
| 2010 | 5 | 6 |
| 2011 | 3 | 4 |
| 2012 | 7 | 2 |
| 2013 | 4 | 4 |
| 2014 | 8 | 6 |
| 2015 | 6 | 10 |
| 2016 | 10 | 7 |
| 2017 | 7 | 13 |
| 2018 | 10 | 10 |
| 2019 | 7 | 6 |
| 2020 | 12 | 9 |
| 2021 | 9 | 9 |
| 2022 | 9 | 5 |
| 2023 | 3 | 2 |
| 2024 | 7 | 4 |
| 2025 | 1 | 2 |
| 2026 | 2 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Versatile anti-ambipolar phototransistors based on mixed-dimensional heterojunctions25 Aug 2026US 12,720,877 B2City University of Hong Kong
- Near-omnidirectional InP nanowire-HBT photodetectors28 Apr 2026US 12,615,855 B1Northrop Grumman Systems Corporation
- Lateral phototransistor9 Dec 2025US 12,495,623 B2GLOBALFOUNDRIES U. S. Inc.
- Photo-current amplification apparatus18 Jun 2024US 12,015,384 B2Artilux, Inc.
- Optically switched IGBT11 Jun 2024US 12,009,812 B2Simmonds Precision Products, Inc.
- Technologies for micro-led optical interconnects20 Aug 2026US 2026/0247737 A1
- Phototransistor25 Jun 2026US 2026/0182050 A1Taiwan-Asia Semiconductor Corporation
- Optically quenchable carbon-doped gallium nitride photoconductive semiconductor switches15 Jan 2026US 2026/0020356 A1
- Phototransistor15 Jan 2026US 2026/0020357 A1Taiwan-Asia Semiconductor Corporation
- High-bandgap(eg) structure in planar floating-base bipolar phototransistor (pt)9 Oct 2025US 2025/0318288 A1Wavefront Holdings, LLC
Most cited
By later US patents
- Semiconductor device having a semiconductor region in which a band gap being continuously graded273US 5,093,704 ACanon Kabushiki Kaisha · 1992
- Infra red detectors65US 4,679,063 AThe Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland · 1987
- Photoelectric converter62US 4,686,554 ACanon Kabushiki Kaisha · 1987
- Amorphous SI/SIC heterojunction color-sensitive phototransistor59US 5,311,047 ANational Science Council · 1994
- Phototransistor with quantum well base structure53US 5,399,880 AAT&T Corp. · 1995