Amorphous SI/SIC heterojunction color-sensitive phototransistor
AssigneeNational Science Council
InventorChun-Yen Chang
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Abstract
An amorphous Si/SiC heterojunction color-sensitive phototransistor was successfully fabricated by plasma-enhanced chemical vapor deposition. The structure is glass/ITO/a-Si(n.sup.+ -i-p.sup.+)/a-SiC(i-n.sup.+)/Al. The device is a bulk barrier transistor with a wide-bandgap amorphous SiC emitter. The phototransistor revealed a very high optical gain of 40 and a response speed of 10 us at an input light power of 5 uW and a collector current of 0.12 mA at a voltage of 14 V. The peak response occurs at 610 nm under 1 V bias and changes to 420 and 540 nm under 7- and 13-V biases, respectively.
Claims3
An amorphous Si/SiC heterojunction color-sensitive majority carrier bulk barrier phototransistor, comprising in order the following layers:
- a glass substrate;
- a collector electrode formed by an ITO coating on the glass substrate;
- an amorphous silicon n.sup.+ collector layer;
- an undoped amorphous silicon collector layer;
- a p.sup.+ amorphous silicon base layer;
- an amorphous undoped silicon carbide emitter layer;
- an amorphous n.sup.+ silicon carbide emitter layer;
- and an emitter electrode.
Dependencies are inferred from the claim text.