H10D 86/0229
Characterised by control of the annealing or irradiation parameters
Official title: {characterised by control of the annealing or irradiation parameters}
H10D86/0229 (Characterised by control of the annealing or irradiation parameters) appears on 1,286 US grants and 1,389 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,286
- Published applications
- 1,389
- Assignees
- 184
- Inventors
- 1,313
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 3 | 0 |
| 1997 | 7 | 0 |
| 1998 | 7 | 0 |
| 1999 | 15 | 0 |
| 2000 | 13 | 0 |
| 2001 | 17 | 17 |
| 2002 | 20 | 49 |
| 2003 | 37 | 78 |
| 2004 | 48 | 92 |
| 2005 | 48 | 117 |
| 2006 | 72 | 105 |
| 2007 | 82 | 149 |
| 2008 | 79 | 88 |
| 2009 | 91 | 72 |
| 2010 | 110 | 80 |
| 2011 | 95 | 76 |
| 2012 | 70 | 60 |
| 2013 | 83 | 42 |
| 2014 | 72 | 38 |
| 2015 | 45 | 34 |
| 2016 | 39 | 60 |
| 2017 | 41 | 43 |
| 2018 | 39 | 42 |
| 2019 | 43 | 51 |
| 2020 | 41 | 34 |
| 2021 | 27 | 20 |
| 2022 | 10 | 10 |
| 2023 | 12 | 5 |
| 2024 | 9 | 12 |
| 2025 | 7 | 11 |
| 2026 | 3 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Methods and devices for fabricating and assembling printable semiconductor elements883US 7,622,367 B1The Board of Trustees of the University of Illinois · 2009
- Semiconductor device and manufacturing method thereof849US 7,910,490 B2Semiconductor Energy Laboratory Co.Ltd. · 2011
- Semiconductor device and manufacturing method thereof834US 7,932,521 B2Semiconductor Energy Laboratory Co.Ltd. · 2011