Thin film transistor substrate, manufacturing method thereof and display apparatus comprising the same

A method for manufacturing a thin film transistor substrate for a display apparatus, the method comprising:

• forming a buffer layer on a base substrate;
• forming a photoresist pattern on the buffer layer;
• etching the buffer layer using the photoresist pattern as a mask to form flat areas and inclined areas that are alternately disposed;
• forming an active material layer on the buffer layer;
• annealing the active material layer;
• and
• removing a portion of the active material layer disposed in the inclined areas by wet etching.

A display apparatus comprising:

• a display area and a non-display area adjacent to the display area,
• a first thin film transistor disposed in the non-display area, the first thin film transistor comprising a first active layer having a plurality of sub-active layers spaced apart from each other, and a first gate electrode overlapping at least a portion of the first active layer;
• and
• a second thin film transistor disposed in the non-display area, the second thin film transistor comprising a buffer layer disposed on a base substrate, a second active layer disposed on the buffer layer, and a second gate electrode overlapping at least a portion of the second active layer,
• wherein the buffer layer comprises flat areas and inclined areas alternately disposed, and
• wherein the plurality of sub-active layers are spaced apart from each other by the inclined areas and disposed in the flat areas.