H10D 84/642
Combinations of non-inverted vertical bjts of the same conductivity type having different
Official title: {Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors}
H10D84/642 (Combinations of non-inverted vertical bjts of the same conductivity type having different) appears on 153 US grants and 79 published applications in this corpus.
Search patents in H10D- Granted patents
- 153
- Published applications
- 79
- Assignees
- 77
- Inventors
- 286
- Latest grant
- 7 Oct 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 7 | 0 |
| 1978 | 4 | 0 |
| 1979 | 5 | 0 |
| 1980 | 2 | 0 |
| 1981 | 8 | 0 |
| 1982 | 5 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 2 | 0 |
| 1986 | 6 | 0 |
| 1987 | 11 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
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| 1996 | 6 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 2 |
| 2002 | 1 | 1 |
| 2003 | 1 | 0 |
| 2004 | 2 | 3 |
| 2005 | 1 | 1 |
| 2006 | 2 | 8 |
| 2007 | 0 | 2 |
| 2008 | 2 | 6 |
| 2009 | 3 | 3 |
| 2010 | 3 | 1 |
| 2011 | 6 | 1 |
| 2012 | 1 | 0 |
| 2013 | 1 | 3 |
| 2014 | 2 | 0 |
| 2015 | 1 | 5 |
| 2016 | 2 | 3 |
| 2017 | 6 | 8 |
| 2018 | 10 | 10 |
| 2019 | 8 | 4 |
| 2020 | 5 | 4 |
| 2021 | 4 | 2 |
| 2022 | 1 | 3 |
| 2023 | 2 | 3 |
| 2024 | 4 | 3 |
| 2025 | 1 | 2 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Integrated circuit incorporating low voltage and high voltage semiconductor devices168US 4,412,142 AGeneral Electric Company · 1983
- Semiconductor temperature sensor and the method of producing the same85US 6,046,492 ASeiko Instruments Inc. · 2000
- Darlington transistor circuit57US 4,618,875 ARobert Bosch GmbH · 1986
- Integrated Darlington transistor combination including auxiliary transistor and Zener diode50US 4,564,771 ARobert Bosch GmbH · 1986
- Composite semiconductor device50US 4,710,794 AKabushiki Kaisha Toshiba · 1987