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US 12,046,633 B2Granted
Airgap structures in auto-doped region under one or more transistors
AssigneeGlobalFoundries U.S. Inc.
InventorsMark D. Levy, Siva P. Adusumilli, Johnatan A. Kantarovsky, Vibhor Jain
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to airgap structures in a doped region under one or more transistors and methods of manufacture. The structure includes: a semiconductor material comprising a doped region; one or more sealed airgap structures breaking up the doped region of the semiconductor material; and a field effect transistor over the one or more sealed airgap structures and the semiconductor material.
Claims20
A structure comprising:
- a semiconductor material comprising a doped region;
- one or more sealed airgap structures breaking up the doped region of the semiconductor material;
- a second semiconductor material over the doped region of the semiconductor material and over the one or more sealed airgap structures;
- shallow trench isolation regions in the second semiconductor material and above the one or more sealed airgap structures;
- and
- a field effect transistor over the one or more sealed airgap structures and the second semiconductor material,
- wherein the one or more sealed airgap structures are sealed with another semiconductor material, the second semiconductor material is above the other semiconductor material, and a first n-well is below the doped region of the semiconductor material in an underlying semiconductor substrate and below the one or more sealed airgap structures.
4 more elements
A structure comprising:
- a bipolar junction transistor comprising at least a sub-collector within an underlying substrate, the sub-collector comprising an n-well within the underlying substrate;
- a semiconductor material over the sub-collector comprising a doped region, the doped region being above the sub-collector;
- an active device over the semiconductor material;
- and
- at least one airgap structure below the active device and within the doped region of the semiconductor material, the at least one airgap structure being remote from the sub-collector.
2 more elements
A method comprising:
- forming a semiconductor material comprising a doped region;
- forming one or more sealed airgap structures breaking up the doped region of the semiconductor material;
- forming a second semiconductor material over the doped region of the semiconductor material and over the one or more sealed airgap structures;
- forming shallow trench isolation regions in the second semiconductor material and above the one or more sealed airgap structures;
- and
- forming a field effect transistor over the one or more sealed airgap structures and the semiconductor material,
- wherein the one or more sealed airgap structures are sealed with another semiconductor material, the second semiconductor material is above the other semiconductor material, and a first n-well is formed below the doped region of the semiconductor material in an underlying semiconductor substrate and below the one or more sealed airgap structures.
4 more elements
Dependencies are inferred from the claim text.