H10D 8/605
Of the trench conductor-insulator-semiconductor barrier type
Official title: {of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]}
H10D8/605 (Of the trench conductor-insulator-semiconductor barrier type) appears on 401 US grants and 457 published applications in this corpus.
Search patents in H10D- Granted patents
- 401
- Published applications
- 457
- Assignees
- 138
- Inventors
- 514
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 3 | 2 |
| 2002 | 5 | 6 |
| 2003 | 4 | 9 |
| 2004 | 8 | 6 |
| 2005 | 5 | 14 |
| 2006 | 8 | 8 |
| 2007 | 2 | 9 |
| 2008 | 4 | 9 |
| 2009 | 8 | 6 |
| 2010 | 14 | 21 |
| 2011 | 13 | 22 |
| 2012 | 16 | 24 |
| 2013 | 32 | 34 |
| 2014 | 34 | 32 |
| 2015 | 33 | 28 |
| 2016 | 32 | 30 |
| 2017 | 29 | 26 |
| 2018 | 19 | 15 |
| 2019 | 16 | 14 |
| 2020 | 27 | 25 |
| 2021 | 12 | 23 |
| 2022 | 18 | 14 |
| 2023 | 10 | 21 |
| 2024 | 13 | 25 |
| 2025 | 17 | 18 |
| 2026 | 14 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Schottky barrier diode6 Oct 2026US 12,757,419 B2Novel Crystal Technology, Inc.
- GaN-based trench metal oxide Schottky barrier diode and preparation method therefor21 Jul 2026US 12,690,204 B2Sun Yat-Sen University
- Schottky barrier diode16 Jun 2026US 12,660,218 B2TDK Corporation
- Semiconductor structure and semiconductor device19 May 2026US 12,635,213 B2Vanguard International Semiconductor Corporation
- Semiconductor element, method for manufacturing semiconductor element, semiconductor device, and method for manufacturing semiconductor device19 May 2026US 12,635,520 B2Novel Crystal Technology, Inc.
- Semiconductor device23 Jul 2026US 2026/0214952 A1TDK Corporation
- Semiconductor device16 Jul 2026US 2026/0206243 A1TDK Corporation
- Schottky diode18 Jun 2026US 2026/0173417 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Sic double gate trench mosfet with embedded supper barrier rectifier having short channel18 Jun 2026US 2026/0173502 A1Nami MOS CO., LTD.
- Manufacturable gallium containing electronic devices4 Jun 2026US 2026/0156886 A1KYOCERA SLD Laser, Inc.
Most cited
By later US patents
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Schottky barrier rectifier with MOS trench237US 5,365,102 ANorth Carolina State University · 1994
- Power semiconductor devices having trench-based gate electrodes and field plates232US 6,388,286 B1North Carolina State University · 2002
- Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same183US 6,191,447 B1Micro-Ohm Corporation · 2001
- Monolithically integrated trench MOSFET and Schottky diode176US 6,351,018 B1Fairchild Semiconductor Corporation · 2002