Semiconductor structure and semiconductor device

A semiconductor structure, comprising:

• a substrate;
• an epitaxial layer disposed on the substrate;
• multiple field plate structures comprising a first field plate structure and a second field plate structure disposed in a first unit and a second unit of the semiconductor structure, respectively;
• multiple shielding layers disposed between bottom portions of the field plate structures and the epitaxial layer;
• an upper electrode layer covering the field plate structures, wherein the upper electrode layer is separated from the epitaxial layer in the first unit and in direct contact with the epitaxial layer in the second unit;
• and
• a lower electrode layer disposed under the substrate and opposite to the epitaxial layer,
• wherein each of the field plate structures comprises:
• a conductive filling layer with at least a portion thereof embedded in the epitaxial layer;
• and
• a dielectric spacer layer extending between the conductive filling layer and the epitaxial layer;
• and
• wherein the dielectric spacer layer comprises an opening, and the conductive filling layer is in direct contact with the shielding layers through the opening.