H03H 2009/02314
Forming part of a transistor structure
Official title: {forming part of a transistor structure}
H03H2009/02314 (Forming part of a transistor structure) appears on 30 US grants and 32 published applications in this corpus.
Search patents in H03H- Granted patents
- 30
- Published applications
- 32
- Assignees
- 26
- Inventors
- 76
- Latest grant
- 6 Jan 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 1 | 0 |
| 2006 | 0 | 1 |
| 2007 | 1 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 3 |
| 2011 | 2 | 3 |
| 2012 | 2 | 2 |
| 2013 | 1 | 1 |
| 2014 | 2 | 2 |
| 2015 | 1 | 2 |
| 2016 | 3 | 2 |
| 2017 | 2 | 1 |
| 2018 | 3 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 2 |
| 2021 | 1 | 1 |
| 2022 | 1 | 2 |
| 2023 | 2 | 4 |
| 2024 | 4 | 2 |
| 2025 | 3 | 1 |
| 2026 | 1 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Tunable resonator6 Jan 2026US 12,520,575 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Piezo-resistive resonator device having drive and sense transistors with wells of opposite doping14 Oct 2025US 12,445,092 B2Intel Corporation
- Self-amplified resonators with embedded piezoresistive elements for high performance, ultra-low SWaP microwave and millimeter-wave applications5 Aug 2025US 12,381,512 B2National Technology & Engineering Solutions of Sandia, LLC
- Oscillator with fin field-effect transistor (FinFET) resonator27 May 2025US 12,316,276 B2Apple Inc.
- Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectric22 Oct 2024US 12,125,893 B2Intel Corporation
- Tunable resonator7 May 2026US 2026/0129963 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Oscillator with Fin Field-Effect Transistor (FinFET) Resonator14 Aug 2025US 2025/0260365 A1Apple Inc.
- Self-amplified resonators with embedded piezoresistive elements for high performance, ultra-low sw ap microwave and millimeter-wave applications16 May 2024US 2024/0162859 A1National Technology & Engineering Solutions of Sandia, LLC
- Oscillator with Fin Field-Effect Transistor (FinFET) Resonator18 Apr 2024US 2024/0128929 A1Apple Inc.
- Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectric10 Aug 2023US 2023/0253475 A1Intel Corporation
Most cited
By later US patents
- MEMs-based resonant FinFET22US 9,663,346 B1Globalfoundries Inc. · 2017
- Electromechanical electron transfer devices9US 6,946,693 B1Wisconsin Alumni Research Foundation · 2005
- Fin-FET resonant body transistor9US 9,899,363 B1Globalfoundries Inc. · 2018
- Multigate resonant channel transistor6US 9,294,035 B2Intel Corporation · 2016
- Electromechanical electron transfer devices5US 7,214,571 B2Wisconsin Alumni Research Foundation · 2007