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US 12,445,092 B2Granted
Piezo-resistive resonator device having drive and sense transistors with wells of opposite doping
AssigneeIntel Corporation
InventorsGary A. Allen, Tanay A. Gosavi, Raseong Kim, Dmitri Evgenievich Nikonov, Ian Alexander Young
Life of this patent
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Abstract
In one embodiment, a piezo-resistive resonator device includes one or more drive transistors with source and drain regions in a first well and a sense transistor with source and drain regions in a second well of opposite polarity than the first well. The gates of the drive and sense transistor are connected to a first direct current (DC) source. The drain region of the sense transistor is connected to a second DC source, and the source and drain regions of the drive transistor are connected to an alternating current (AC) source.
Claims25
An apparatus comprising:
- a first transistor comprising a source region, a drain region, a channel region between the source and drain regions, a gate contact, and a dielectric between the gate contact and the channel region, wherein the channel region of the first transistor is in a first well;
- a second transistor comprising a source region, a drain region, a channel region between the source and drain regions, a gate contact, and a dielectric between the gate contact and the channel region, wherein the channel region of the second transistor is in a second well of opposite polarity than the first well;
- a third transistor comprising a source region, a drain region, a channel region between the source and drain regions, a gate contact, and a dielectric between the gate contact and the channel region, wherein the channel region is in a third well of the same polarity as the first well;
- a first direct current (DC) contact to receive DC current, the first DC contact coupled to the gate contact of the first transistor, to the gate contact of the second transistor, and to the gate contact of the third transistor;
- a second direct current (DC) contact to receive DC current, the second DC contact coupled to the drain region of the second transistor;
- and
- alternating current (AC) contacts to receive AC current, the AC contacts coupled to the source and drain regions of the first transistor and the third transistor.
4 more elements
A resonator device comprising:
- a first transistor comprising a source region, a drain region, a channel region between the source and drain regions, a gate contact, and a dielectric between the gate contact and the channel region, wherein the channel region of the first transistor is in a first well;
- a second transistor comprising a source region, a drain region, a channel region between the source and drain regions, a gate contact, and a dielectric between the gate contact and the channel region, wherein the channel region of the second transistor is in a second well of opposite polarity than the first well;
- a third transistor comprising a source region, a drain region, a channel region between the source and drain regions, a gate contact, and a dielectric between the gate contact and the channel region, wherein the channel region of the third transistor is in a third well of the same polarity as the first well;
- a direct current (DC) source coupled to the gate contact of the first transistor and to the gate contact of the second transistor;
- an alternating current (AC) source coupled to the source and drain regions of the first transistor and to the source and drain regions of the third transistor;
- sense circuitry coupled to the second transistor to detect modulation of a current flowing through the second transistor based on an input signal from the AC source;
- wherein the second transistor is between the first transistor and third transistor.
4 more elements
A system comprising:
- an oscillator comprising a piezoresistive resonator (PZR) apparatus, the PZR apparatus comprising:
- a sense transistor comprising a source region, a drain region, a channel region between the source and drain regions, a gate contact, and a dielectric between the gate contact and the channel region, wherein the source and drain regions are doped regions in a first well;
- a plurality of drive transistors, wherein each drive transistor comprises a source region, a drain region, a channel region between the source and drain regions, a gate contact, and a dielectric between the gate contact and the channel region, wherein the source and drain regions of each drive transistor are in a well of opposite polarity than the first well;
- a first direct current (DC) contact to receive DC current, the first DC contact coupled to the gate contacts of the drive transistors and to the gate contact of the sense transistor;
- a second direct current (DC) contact to receive DC current, the second DC contact coupled to the drain region of the sense transistor;
- and
- alternating current (AC) contacts to receive AC current, the AC contacts coupled to the source and drain regions of the drive transistor;
- a first DC voltage source coupled to the first DC contact;
- a second DC voltage source coupled to the second DC contact;
- and
- an AC voltage source coupled to the AC contacts.
8 more elements
An apparatus comprising:
- a sense transistor comprising a source region, a drain region, a channel region between the source and drain regions, a gate contact, and a dielectric between the gate contact and the channel region, wherein the source and drain regions are doped regions in a first well;
- a plurality of drive transistors, wherein each drive transistor comprises a source region, a drain region, a channel region between the source and drain regions, a gate contact, and a dielectric between the gate contact and the channel region, wherein the source and drain regions of each drive transistor are in a well of opposite polarity than the first well;
- a first contact coupled to the gate contacts of the drive transistors and to the gate contact of the sense transistor;
- a second contact coupled to the drain region of the sense transistor;
- a third contact coupled to the source and drain regions of each of the drive transistors.
2 more elements
Dependencies are inferred from the claim text.