Multigate resonant channel transistor

An oscillator comprising:

• an amplifier formed on a monolithic substrate;
• a multiple gate resonant channel array, formed on the substrate and coupled to the amplifier, including:
• (a) a plurality of transistors including a plurality of fins, each of the fins having a channel between source and drain nodes, coupled to common source and drain contacts;
• and (b) common first and second tri-gates coupled to each of the fins and located between the source and drain contacts;
• wherein the fins mechanically resonate at a first frequency when one of the first and second tri-gates is periodically activated to produce periodic downward forces on the fins.

A method comprising:

• forming a fin on a layer;
• forming a nonplanar transistor including the fin that includes source and drain nodes, and a channel between the source and drain nodes;
• forming a trench in the layer and directly below the channel;
• and
• forming first and second tri-gates on the fin between the source and drain nodes;
• wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin.

A mechanical resonator apparatus comprising:

• a nonplanar transistor including a fin that includes source and drain nodes, and a channel between the source and drain nodes;
• a layer directly contacting the fin and including a trench;
• a first tri-gate, which is nonplanar, on the fin between the source and drain nodes;
• and first insulation included between the first tri-gate and the fin;
• a second tri-gate, which is nonplanar, on the fin between the source and drain nodes;
• and second insulation included between the second tri-gate and the fin;
• wherein (a) the channel is suspended over the trench, (b) the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin, and (c) at least a portion of the channel extends between the first and second tri-gates.