Self-amplified resonators with embedded piezoresistive elements for high performance, ultra-low SWaP microwave and millimeter-wave applications

A super high frequency (SHF) or extremely high frequency (EHF) bulk acoustic resonator comprising a nanostructure, the nanostructure comprising:

• a substrate;
• a three-dimensional structure disposed on the substrate, wherein the three-dimensional structure comprises a planar structure having a cross-sectional area comprising a first axis and a second axis and a width, and wherein the width comprises a dimension that is smaller than a dimension of the first axis and a dimension of the second axis, and wherein the planar structure comprises:
• at least one n-type silicon nanocomponent extending along the first axis, the second axis, or both;
• and
• a matrix material contacting the nanocomponent on at least one side, the matrix material comprising silicon (Si), a silicon:germanium (SiGe) alloy, or germanium (Ge);
• wherein the at least one nanocomponent has a first dimension extending less than or equal to the width of the planar structure;
• wherein the at least one nanocomponent comprises a plurality of nanosheets, wherein the plurality of nanosheets are parallel to the substrate, and wherein the matrix material is in the form of a plurality of matrix sheets, and where individual members of the plurality of nanosheets alternate in a stack with individual members of the plurality of matrix sheets.