H01S 5/3227
Porous si
Official title: {porous Si}
H01S5/3227 (Porous si) appears on 10 US grants and 3 published applications in this corpus.
Search patents in H01S- Granted patents
- 10
- Published applications
- 3
- Assignees
- 11
- Inventors
- 25
- Latest grant
- 10 May 2016
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 3 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 0 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 1 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 1 |
| 2016 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Methods for producing new silicon light source and devices10 May 2016US 9,337,395 B2Tubitak
- Dislocation-based light emitter1 Feb 2011US 7,880,189 B2Ihp GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut Fur Innovative Mikroelektronik
- Method for making a device comprising layers of planes of quantum dots10 Feb 2004US 6,690,027 B1France Telecom
- Laser device based on silicon nanostructures9 Dec 2003US 6,661,035 B2Consiglio Nazionale Della Ricerche
- Optical component comprising layers of porous silicon9 Dec 1997US 5,696,629 AForschungszentrum Julich GmbH
- Methods for producing new silicon light source and devices14 May 2015US 2015/0132870 A1Tubitak
- Dislocation-based light emitter31 Dec 2009US 2009/0321757 A1Ihp GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut Fur Innovative Mikroelektronik
- Laser device based on silicon nanostructures7 Nov 2002US 2002/0163003 A1INFM Istituto Nazionale per La Fisica Della Materia
Most cited
By later US patents
- Apparatus and method for generating photluminescence emission lines from rare-earth-element-doped CAF2 thin films over a SI-based substrate19US 5,552,667 ATexas Instrument Incorporated · 1996
- Porous silicon as a light source for rare earth-doped CaF.sub.2 laser18US 5,301,204 ATexas Instruments Incorporated · 1994
- Optical component comprising layers of porous silicon18US 5,696,629 AForschungszentrum Julich GmbH · 1997
- Silicon-based microlaser by doped thin films11US 5,369,657 ATexas Instruments Incorporated · 1994
- Method for generating photoluminescence emission lines from transition element doped CAF2 thin films over a Si-based substrate7US 5,306,385 ATexas Instruments Incorporated · 1994