Laser device based on silicon nanostructures
AssigneesINFM Instituto Nazionale per la Fisica Della Materia, Universita'Degli Studi di Trento, Universita'Degli Studi di Catania, Consiglio Nazionale Della Ricerche
InventorsLuca Dal Negro, Giorgia Franzo′, Zeno Gaburro, Fabio Iacona, Lorenzo Pavesi, Francesco Priolo
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Abstract
A silicon-based light-emitting device is described and comprises an active region, an excitation system which can bring about a condition of inversion of the population of carriers within the active region, and semi-reflective elements which can define a resonant optical structure in which the active region is inserted so as to bring about stimulated emission of coherent light. The active region comprises silicon nanostructures immersed in a silicon-dioxide-based dielectric matrix.
Claims23
A silicon-based material suitable as an active region for light amplification, comprising a silicon dioxide substrate including amporphous silicon nanostructures or crystalline silicon nanocrystals, said material having the property of achieving stimulated emission of coherent light upon excitation.
A silicon-based light-emitting device, comprising, in combination:
- an active region which can emit photons at optical frequencies as a result of radiative recombination of the charge carriers confined therein,
- an excitation system which can alter the thermodynamic equilibrium of the carrier populations in order to bring about a condition of population inversion within the active region, and
- semi-reflective means for defining a resonant optical structure in which the active region is inserted so as to bring about stimulated emission of coherent light,
- wherein the active region comprises silicon nanostructures immersed in a dielectric matrix based on silicon dioxide.
Dependencies are inferred from the claim text.