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US 5,306,385 AGranted
Method for generating photoluminescence emission lines from transition element doped CAF2 thin films over a Si-based substrate
AssigneeTexas Instruments Incorporated
InventorsChih-Chen Cho, Tsen H. Lin, Shou-Kong Fan, Walter M. Duncan
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Abstract
A method and apparatus for producing photoluminescence emissions (68) from thin CaF.sub.2 films grown on either silicon or silicon/aluminum substrate shows narrow emission linewidth and high emission intensities for CaF.sub.2 with thickness as low as 0.2 .mu.m. The preferred embodiment is doped with a rare-earth such as Nd.
Claims24
A method for producing photoluminescence emissions comprising the steps of:
- forming a layer of reflective material, said reflective material having the property of reflecting greater than approximately 90 percent of radiation at the wavelength of said emissions;
- forming a layer of CaF.sub.2 over said layer of reflective material;
- and
- doping said CaF.sub.2 film with a transition element dopant.
1 more element
A method for amplifying photoluminescence emissions comprising the steps of:
- forming a CaF.sub.2 film on said aluminum film;
- doping said CaF.sub.2 film with a rare-earth dopant;
- and
- activating said CaF.sub.2 film with photoluminescence energy to produce therefrom amplified photoluminescence emissions.
1 more element
Dependencies are inferred from the claim text.