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US 9,337,395 B2Granted
Methods for producing new silicon light source and devices
AssigneeTubitak
InventorSeref Kalem
Life of this patent
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Abstract
The present invention relates to production method and device applications of a new silicon (Si) semiconductor light source that emits at a single wavelength at 1320 nm with a full width at half maximum (FWHM) of less than 200 nm and a photoluminescence quantum efficiency of greater than 50% at room temperature. The semiconductor that is the base for the new light source includes a surface which is treated by an acid vapor involving heavy water or Deuterium Oxide (D2O) and a surface layer producing the light source at 1320 nm.
Claims1
A method for producing a silicon light source, comprising:
- etching the surface of a silicon wafer (4) by acid vapor of heavy water D2O containing HF:HNO3 chemical mixture;
- wherein the silicon wafers (4) are single crystal silicon wafers having <100> or <111> crystallographic orientations and conductivities of n-type or p-type;
- forming a nanoporous silicon layer (3) on the silicon wafer (4);
- forming a deuterated ammonium silicon hexafluoride (ND4)2SiF6 layer (6) on the nanoporous silicon layer (3);
- wherein the nanoporous silicon layer (3) further comprises a silicon dioxide SiOx, wherein the x value is close to 2;
- wherein the heavy water (deuterium oxide, D2O) containing chemical mixture comprises a weight ratio of the HF solution of 40-50%, a weight ratio of the HNO3 solution of 60-70%;
- wherein a proportion of 2 to 7 unit volume from HF, 1 to 12 unit volume from HNO3 and 1 to 6 unit volume from D2O are used.
4 more elements
Dependencies are inferred from the claim text.