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US 5,552,667 AGranted
Apparatus and method for generating photluminescence emission lines from rare-earth-element-doped CAF2 thin films over a SI-based substrate
AssigneeTexas Instrument Incorporated
InventorsChin-Chen Cho, Tsen H. Lin, Shou-Kong Fan, Walter M. Duncan
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Abstract
A method and apparatus for producing photoluminescence emissions (68) from thin CaF.sub.2 films grown on either silicon or silicon/aluminum substrate shows narrow emission linewidth and high emission intensities for CaF.sub.2 with thickness as low as 0,2 .mu.m, The preferred embodiment is doped with a rare-earth such as Nd.
Claims20
An apparatus for producing photoluminescence emissions, said apparatus comprising:
- a region of reflective material formed over a substrate;
- and
- a CaF.sub.2 film formed over said region of reflective material, said CaF.sub.2 film doped with a rare-earth dopant.
An apparatus for producing photoluminescence emissions, said apparatus comprising:
- a semiconductor substrate;
- a layer of aluminum over said substrate;
- and
- a CaF.sub.2 film formed over said layer of aluminum, said CaF.sub.2 film doped with a rare-earth dopant.
1 more element
Dependencies are inferred from the claim text.