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AssigneeIhp GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut Fur Innovative Mikroelektronik
InventorsMartin Kittler, Manfred Reiche, Tzanimir Arguirov, Winfried Seifert
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A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.
A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, characterized in that the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.
Use of a silicon substrate which has a first interface between a first and a second silicon layer, whose lattice structures are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength, for the production of a light-emitting semiconductor component.
Dependencies are inferred from the claim text.