H01S 5/3081
Using amphoteric doping
Official title: {using amphoteric doping}
H01S5/3081 (Using amphoteric doping) appears on 24 US grants and 9 published applications in this corpus.
Search patents in H01S- Granted patents
- 24
- Published applications
- 9
- Assignees
- 13
- Inventors
- 36
- Latest grant
- 24 Dec 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 4 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 1 |
| 2005 | 1 | 1 |
| 2006 | 1 | 2 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 1 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 1 |
| 2017 | 0 | 0 |
| 2018 | 1 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 1 |
| 2023 | 0 | 0 |
| 2024 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Laser element24 Dec 2024US 12,176,683 B2Sharp Fukuyama Laser Co., Ltd.
- Passivation of VCSEL sidewalls12 Jun 2018US 9,997,892 B2Finisar Corporation
- Passivation of VCSEL sidewalls26 Aug 2014US 8,815,617 B2Finisar Corporation
- Waveguide device having delta doped active region24 Apr 2012US 8,165,180 B2Agere Systems Inc.
- Surface-emitting type device and its manufacturing method21 Apr 2009US 7,521,721 B2Seiko Epson Corporation
- Laser element19 May 2022US 2022/0158414 A1Sharp Fukuyama Laser Co., Ltd.
- Passivation of vcsel sidewalls15 Dec 2016US 2016/0365704 A1Finisar Corporation
- Waveguide device having delta doped active region18 Nov 2010US 2010/0290497 A1Agere Systems Inc.
- Passivation of vcsel sidewalls1 Nov 2007US 2007/0254393 A1Finisar Corporation
- Surface-emitting type device and its manufacturing method21 Sep 2006US 2006/0211263 A1Seiko Epson Corporation
Most cited
By later US patents
- Gated resonant tunneling device and fabricating method thereof54US 5,962,864 AKabushiki Kaisha Toshiba · 1999
- Semiconductor device having diffraction grating40US 5,663,592 ACanon Kabushiki Kaisha · 1997
- Method of making a semiconductor device utilizing crystal orientation dependence of impurity concentration36US 5,668,048 AFujitsu Limited · 1997
- Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same24US 4,932,033 ACanon Kabushiki Kaisha · 1990
- Method for producing an optical semiconductor device having a carrier injection path or an electric-field applying path17US 5,728,605 ACanon Kabushiki Kaisha · 1998