Method of making a semiconductor device utilizing crystal orientation dependence of impurity concentration
AssigneeFujitsu Limited
InventorsMakoto Kondo, Chikashi Anayama, Hajime Shoji
Life of this patent
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Abstract
A technique for manufacturing a semiconductor device includes the steps of preparing a stepped substrate made of a group III-V compound semiconductor and having a flat surface exposing a (1 0 0) plane and a slanted surface exposing an (n 1 1)B plane, wherein is a real number of about 1.ltoreq.n, and epitaxially growing the group III-V compounds semiconductor to form an epitaxial layer on the surface of the stepped substrate while doping p- and n-type impurities, selectively at the same time or, alternatively, under conditions such that the grown epitaxial layer has an n-type region on the slanted surface and a p-type region on the flat surface.
Claims19
A method of manufacturing a semiconductor device, comprising the steps of:
- preparing a substrate made of a group III-V compound semiconductor and having a flat surface exposing an (n 1 1)A plane, wherein n is a real number of about 1.ltoreq.n.ltoreq.about 3;
- epitaxially growing an n-type layer on said substrate;
- epitaxially growing a p-type layer containing carbon as the p-type impurity on said n-type layer;
- and
- epitaxially growing another n-type layer on said p-type layer, said another n-type layer being made of a material having a forbidden band width wider than an inhibited band width of said p-type layer.
A method of manufacturing a semiconductor device, comprising the steps of:
- preparing a substrate made of a group III-V compound semiconductor and having a surface crystal orientation tilted by an angle in a range larger than 0.degree. and equal to or smaller than 35.degree. from a (1 0 0) plane to a (1 1 1)B plane or a surface crystal orientation tilted by an angle in a range larger than 0.degree. and smaller than 25.degree. from the (1 0 0) plane to a (1 1 1)A plane;
- epitaxially growing an electron transfer layer on said substrate without intentionally introducing doping impurities, by using an organic metal compound containing carbon as a group III source material or as a group V source material;
- and
- epitaxially growing an electron supply layer made of a material having a forbidden band width wider than a forbidden band width of said electron transfer layer.
A method of manufacturing a semiconductor device, comprising the steps of:
- preparing a stepped substrate made of a group III-V compound semiconductor and exposing first and second planes having respective, different crystal orientations, said first and second planes respectively providing first and second, different, carbon capture amounts in an epitaxial layer to be formed on the surface of said stepped substrate by doping carbon as an impurity;
- and
- epitaxially growing a group III-V compound semiconductor on said stepped substrate while doping at least carbon as an impurity under such conditions that the grown epitaxial layer has regions of different conductivity types respectively on said first and second planes.
Dependencies are inferred from the claim text.