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AssigneeCanon Kabushiki Kaisha
InventorsSeiichi Miyazawa, Mitsuru Ohtsuka
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A semiconductor laser having a laser resonator structure having a substrate with a trapezoidal projection forming on both sides of an upper base an inclined surface extending along a resonating direction of a resonator, a first semiconductor layer of a first or second conductivity type formed on the substrate, an active layer for generating a laser beam, a second semiconductor layer formed on the substrate and to which an impurity of a convertible conductivity type is doped with a portion of the second semiconductor layer above the inclined surface of the substrate having the first conductivity type and the other portion having the second conductivity type, and a pair of electrodes causing a current to flow through the active layer.
A semiconductor laser having a laser resonator structure, comprising:
A semiconductor laser having a laser resonator structure, comprising:
A semiconductor laser having a laser resonator structure, comprising:
Dependencies are inferred from the claim text.