Passivation of vcsel sidewalls
AssigneeFinisar Corporation
InventorRalph H. Johnson
Life of this patent
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Abstract
A semiconductor structure configured for use in a VCSEL or RCLED. The semiconductor structure includes an oxidizing layer constructed from materials that can be oxidized during a lithographic process so as to create an oxide aperture. The semiconductor structure further includes a number of layers near the oxidizing layer. A passivation material is disposed on the layers near the oxidizing layer. The passivation material is configured to inhibit oxidation of the layers.
Claims13
A semiconductor structure configured for use in an optical semiconductor device comprising:
- an oxidizing layer constructed from materials that can be oxidized during a process so as to create an oxide aperture;
- a plurality of layers near the oxidizing layer comprising:
- a thermal conduction layer disposed above the oxidizing layer,
- a mirror above the thermal conduction layer, and
- a stop etch layer disposed above the oxidizing layer and below the mirror;
- and
- a passivation material disposed on the thermal conduction layer and the mirror, the passivation material configured to inhibit oxidation of the thermal conduction layer and the mirror.
5-7. (canceled)
10-11. (canceled)
A semiconductor structure configured for use in an optical semiconductor device comprising:
- an oxidizing layer constructed from materials that can be oxidized during a process so as to create an oxide aperture;
- a plurality of layers near the oxidizing layer comprising:
- a thermal conduction layer disposed above the oxidizing layer,
- a top mirror above the thermal conduction layer, and
- a stop etch layer disposed above the oxidizing layer and below the thermal conduction layer;
- a bottom mirror;
- and
- a passivation material disposed on the thermal conduction layer and the top mirror, the passivation material configured to inhibit oxidation of the thermal conduction layer and the top mirror.
Dependencies are inferred from the claim text.