Passivation of VCSEL sidewalls
AssigneeFinisar Corporation
InventorRalph H. Johnson
Life of this patent
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Abstract
A semiconductor structure configured for use in a VCSEL or RCLED. The semiconductor structure includes an oxidizing layer constructed from materials that can be oxidized during a lithographic process so as to create an oxide aperture. The semiconductor structure further includes a number of layers near the oxidizing layer. A passivation material is disposed on the layers near the oxidizing layer. The passivation material is configured to inhibit oxidation of the layers.
Claims10
A semiconductor structure configured for use in an optical semiconductor device comprising:
- an oxidizing layer comprising an oxide aperture;
- a plurality of layers near the oxidizing layer comprising:
- a thermal conduction layer disposed above the oxidizing layer, the thermal conduction layer including aluminum,
- a mirror above the thermal conduction layer, and
- a stop etch layer disposed above the oxidizing layer and below the mirror, the stop etch layer having a lower etch selectivity than the thermal conduction layer with respect to a particular etchant;
- a passivation material disposed on the thermal conduction layer and the mirror, the passivation material configured to inhibit oxidation of the thermal conduction layer and the mirror;
- and
- a bottom mirror, wherein the bottom mirror comprises a DBR mirror.
A semiconductor structure configured for use in an optical semiconductor device comprising:
- an oxidizing layer comprising an oxide aperture;
- a plurality of layers near the oxidizing layer comprising:
- a thermal conduction layer disposed above the oxidizing layer, the thermal conduction layer including aluminum,
- a mirror above the thermal conduction layer, and
- a stop etch layer disposed above the oxidizing layer and below the mirror, the stop etch layer having a lower etch selectivity than the thermal conduction layer with respect to a particular etchant;
- a bottom mirror, wherein the bottom mirror comprises a DBR mirror;
- and
- a passivation material disposed on the thermal conduction layer and the mirror, the passivation material configured to inhibit oxidation of the thermal conduction layer and the mirror.
Dependencies are inferred from the claim text.