Laser element

A laser element comprising:

• a substrate;
• an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, and an electrode layer successively laminated on one principal surface of the substrate;
• and
• a dielectric layer,
• wherein the p-type semiconductor layer includes a ridge raised in a stripe shape, the ridge including a contact layer formed in a layer including a principal surface on a side opposite the substrate,
• a stepped portion defined by recessing the contact layer is formed in at least part of a boundary between a lateral surface among surfaces defining outer edges of the ridge, the lateral surface extending along a lengthwise direction of the ridge, and the principal surface of the ridge,
• the electrode layer directly covers the principal surface of the ridge and the stepped portion, and
• the dielectric layer covers a region on the one principal surface of the substrate where the ridge does not exist, and covers an outer edge of the electrode layer, on a side opposite a part of the electrode layer that is in contact with the stepped portion, in a part of the electrode layer covering the stepped portion.