H01S 5/2237
With a non-planar active layer
Official title: {with a non-planar active layer}
H01S5/2237 (With a non-planar active layer) appears on 120 US grants and 18 published applications in this corpus.
Search patents in H01S- Granted patents
- 120
- Published applications
- 18
- Assignees
- 38
- Inventors
- 190
- Latest grant
- 6 Oct 2020
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 4 | 0 |
| 1985 | 8 | 0 |
| 1986 | 5 | 0 |
| 1987 | 9 | 0 |
| 1988 | 11 | 0 |
| 1989 | 14 | 0 |
| 1990 | 7 | 0 |
| 1991 | 9 | 0 |
| 1992 | 7 | 0 |
| 1993 | 3 | 0 |
| 1994 | 4 | 0 |
| 1995 | 6 | 0 |
| 1996 | 5 | 0 |
| 1997 | 2 | 0 |
| 1998 | 5 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 3 |
| 2003 | 0 | 0 |
| 2004 | 1 | 1 |
| 2005 | 1 | 2 |
| 2006 | 0 | 1 |
| 2007 | 0 | 1 |
| 2008 | 1 | 3 |
| 2009 | 1 | 2 |
| 2010 | 1 | 1 |
| 2011 | 1 | 1 |
| 2012 | 0 | 0 |
| 2013 | 1 | 1 |
| 2014 | 1 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 1 |
| 2019 | 2 | 0 |
| 2020 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Light emitting device and method of manufacturing light emitting device6 Oct 2020US 10,797,470 B2Ricoh Company, Ltd.
- Light-emitter-based devices with lattice-mismatched semiconductor structures5 Nov 2019US 10,468,551 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Laser diode15 Jan 2019US 10,181,695 B2OSRAM Opto Semiconductors GmbH
- Nitride semiconductor device26 Aug 2014US 8,816,366 B2Panasonic Corporation
- Light-emitter-based devices with lattice-mismatched semiconductor structures6 Aug 2013US 8,502,263 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Light emitting device and method of manufacturing light emitting device6 Feb 2020US 2020/0044416 A1Ricoh Company, Ltd.
- Laser diode22 Mar 2018US 2018/0083415 A1OSRAM Opto Semiconductors GmbH
- Light-Emitter-Based Devices with Lattice-Mismatched Semiconductor Structures26 Sep 2013US 2013/0252361 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Nitride semiconductor device1 Sep 2011US 2011/0211607 A1Panasonic Corporation
- Integrated circuit light emission device, module and fabrication process9 Dec 2010US 2010/0308300 A1SiPhoton Inc.
Most cited
By later US patents
- Channeled mesa laser49US 4,317,085 AXerox Corporation · 1982
- Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement47US 4,660,208 AAmerican Telephone and Telegraph Company, AT&T Bell Laboratories · 1987
- Independently-addressable monolithic laser arrays45US 5,742,631 AXerox Corporation · 1998
- Semiconductor light emitting element and method for fabricating the same40US 5,787,104 AMatsushita Electric Industrial Co., Ltd. · 1998
- Method of making a semiconductor device utilizing crystal orientation dependence of impurity concentration36US 5,668,048 AFujitsu Limited · 1997