Nitride semiconductor device
AssigneePanasonic Corporation
InventorsToshiyuki Takizawa, Tetsuzo Ueda
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Abstract
An object of the present invention is to provide a nitride semiconductor device which shifts a luminescence wavelength toward a longer wavelength side without decreasing luminescence efficiency, and the nitride semiconductor device according to an implementation of the present invention includes: a GaN layer having a (0001) plane and a plane other than the (0001) plane; and an InGaN layer which contacts the GaN layer and includes indium, and the InGaN layer has a higher indium composition ratio in a portion that contacts the plane other than the (0001) plane than in a portion that contacts the (0001) plane.
Claims9
A nitride semiconductor device comprising:
- a first nitride semiconductor including a (0001) plane and a plane other than the (0001) plane;
- and
- a second nitride semiconductor that contacts said first nitride semiconductor and includes indium,
- wherein said second nitride semiconductor has a higher indium composition ratio in a portion that contacts the plane other than the (0001) plane than in a portion that contacts the (0001) plane.
Dependencies are inferred from the claim text.