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US 4,660,208 AGranted
Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement
AssigneeAmerican Telephone and Telegraph Company, AT&T Bell Laboratories
InventorsWilbur D. Johnston, Jr., Judith A. Long, Daniel P. Wilt
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Abstract
High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.
Claims12
A semiconductor device comprising
- an active region,
- electrode means for applying current to said device, and
- means for constraining said current to flow in a channel through said active region,
- characterized in that
- said constraining means comprises a high resistivity Fe-doped MOCVD InP-based layer having an opening through which said channel extends.
2 more elements
A light emitting device comprising
- an InP body,
- a heterostructure including InP and InGaAsP layers and in a limited area thereof an active region which is responsive to pumping current to generate optical radiation,
- electrode means for applying said pumping current to said device, and
- means for constraining said pumping current to flow in a channel through said active region,
- characterized in that
- said constraining means comprises a high resistivity Fe-doped MOCVD InP-based layer formed on said body.
3 more elements
A light emitting device comprising
- a heterostructure of InP and InGaAsP layers formed in the shape of an elongated mesa bounded on opposite sides by channels and including an active layer which is responsive to pumping current to generate optical radiation,
- electrode means for applying said pumping current to said device, and
- means within said channels for constraining pumping to flow through said mesa,
- characterized in that
- said constraining means comprises a high resistivity Fe-doped MOCVD InP-based layer formed in said channels.
2 more elements
Dependencies are inferred from the claim text.