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US 10,797,470 B2Granted
Light emitting device and method of manufacturing light emitting device
AssigneeRicoh Company, Ltd.
InventorsTakeshi Kawashima, Shunichi Sato
Life of this patent
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Abstract
A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer.
Claims10
A light emitting device comprising:
- a first n-type semiconductor layer formed on a substrate;
- a tunnel junction layer disposed on a part of the first n-type semiconductor layer;
- a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer;
- an active layer disposed on the p-type semiconductor layer;
- and
- a second n-type semiconductor layer disposed on the active layer.
3 more elements
A method of manufacturing a light emitting device, the method comprising:
- forming a first n-type semiconductor layer on a substrate;
- forming a tunnel junction layer on a part of the first n-type semiconductor layer;
- forming, on the first n-type semiconductor layer, a p-type semiconductor layer configured to cover the tunnel junction layer;
- forming an active layer on the p-type semiconductor layer;
- and
- forming a second n-type semiconductor layer on the active layer.
3 more elements
Dependencies are inferred from the claim text.