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US 8,502,263 B2Granted
Light-emitter-based devices with lattice-mismatched semiconductor structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJizhong Li, Anthony J. Lochtefeld
Life of this patent
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Abstract
Some aspects for the invention include a method and a structure including a light-emitting device disposed over a second crystalline semiconductor material formed over a semiconductor substrate comprising a first crystalline material.
Claims22
A structure comprising:
- a trench defined in a dielectric layer disposed over and in contact with a top surface of a substrate, the substrate comprising a first crystalline semiconductor material, the trench comprising a width w proximate the top surface of the substrate and comprising a first height h1 at a top surface of the dielectric layer, the first height h1 extending from the top surface of the substrate in a direction perpendicular to the top surface of the substrate, the first height h1 equal to or greater than half the width w;
- a second crystalline semiconductor material disposed in the trench and adjoining the first crystalline semiconductor material, the second crystalline semiconductor material being lattice-mismatched to the first crystalline semiconductor material, the second crystalline semiconductor material having a second height h2 at a top surface of the second crystalline semiconductor material, the second height h2 being equal to or greater than half the width w, the first height h1 at the top surface of the dielectric layer being greater than the second height h2 at the top surface of the second crystalline semiconductor material;
- and
- a light-emitting device comprising a heteroepitaxial structure, the heteroepitaxial structure being disposed over and in contact with the top surface of the second crystalline semiconductor material, the heteroepitaxial structure being disposed at least partially in the trench, a surface of the heteroepitaxial structure between dissimilar materials being lower than the first height h1 at the top surface of the dielectric layer.
1 more element
A structure comprising:
- a dielectric sidewall disposed adjoining a top surface of a substrate comprising a first crystalline semiconductor material, the dielectric sidewall having a first height h1 at a top surface of the dielectric sidewall from the top surface of the substrate and in a direction perpendicular to the top surface of the substrate;
- a second crystalline semiconductor material disposed adjoining the dielectric sidewall and adjoining the first crystalline semiconductor material, the second crystalline semiconductor material being lattice-mismatched to the first crystalline semiconductor material, wherein dislocation defects in the second crystalline semiconductor material terminate at the dielectric sidewall;
- and
- a cascade superlattice disposed over and in contact with at least a portion of the second crystalline semiconductor material and adjoining the dielectric sidewall, the cascade superlattice having a second height h2 at a top surface of the cascade superlattice from the top surface of the substrate and in the direction perpendicular to the top surface of the substrate, the first height h1 at the top surface of the dielectric sidewall being greater than or equal to the second height h2 at the top surface of the cascade superlattice.
1 more element
A structure comprising:
- a trench defined in a dielectric layer disposed over a substrate, the substrate comprising a first crystalline semiconductor material, the trench comprising a width w, a length L, and a first height h1, the width w and the length L being proximate a top surface of the substrate, the width w and the length L being in a same plane parallel to the top surface, the first height h1 extending from the top surface in a direction perpendicular to the top surface, the first height h1 equal to or greater than half the width w, the length L being greater than the width w;
- a second crystalline semiconductor material disposed in the trench and adjoining the first crystalline semiconductor material, the second crystalline semiconductor material being lattice-mismatched to the first crystalline semiconductor material, the second crystalline semiconductor material having a second height h2 equal to or greater than half the width w;
- and
- a light-emitting device disposed over and in contact with at least a portion of the second crystalline semiconductor material, the light-emitting device being wholly disposed in the trench.
1 more element
Dependencies are inferred from the claim text.