Integrated circuit light emission device, module and fabrication process

A semiconductor device comprising:

• an electrically conductive doped semiconductor substrate having a first surface and a second surface;
• a quantum well layer which is not parallel to the first surface or the second surface;
• an electrically conductive reflective layer disposed between the quantum well layer and the second surface;
• a first electrode and a second electrode, formed on opposite surfaces of the device, to pass current through the quantum well layer to cause the quantum well layer to emit light.

An apparatus comprising:

• a plurality of substantially identical light emitting devices formed on a semiconductor substrate, each of the plurality of light emitting devices including
• a plurality of layers formed on a first surface of the substrate, including a first layer and a plurality of light emitting layers;
• and
• a first electrode formed on the first device and shared by all of the plurality of devices.

An apparatus comprising:

• a plurality of light emitting diodes formed on a semiconductor substrate, each of the plurality of light emitting diodes including
• a plurality of device layers formed on a top surface of the substrate;
• and
• a first electrode formed on a bottom surface of the substrate and shared by all of the plurality of devices.

A method comprising:

• forming a plurality of light emitting diodes on a semiconductor wafer;
• prior to dicing of the semiconductor wafer, simultaneously testing all of the plurality of light emitting diodes for manufacturing defects;
• and
• dicing the semiconductor wafer to produce a plurality of physically separate light emitting diodes.