Semiconductor light emitting element and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsSatoshi Kamiyama, Masakatsu Suzuki, Takeshi Uenoyama, Kiyoshi Ohnaka, Akira Takamori, Masaya Mannoh, Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Toshiya Fukuhisa, Yasuhito Kumabuchi
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Abstract
The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
Claims7
A semiconductor laser comprising an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
A method for fabricating a semiconductor laser comprising the step of forming an active layer made of a hexagonal-system compound semiconductor in a c-axis direction, wherein the active layer is formed so that anisotropic strain is generated in a c plane.
Dependencies are inferred from the claim text.