H01S 5/2059
By means of particular conductivity zones
Official title: {by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion}
H01S5/2059 (By means of particular conductivity zones) appears on 818 US grants and 522 published applications in this corpus.
Search patents in H01S- Granted patents
- 818
- Published applications
- 522
- Assignees
- 274
- Inventors
- 1,269
- Latest grant
- 19 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 4 | 0 |
| 1978 | 2 | 0 |
| 1979 | 3 | 0 |
| 1980 | 3 | 0 |
| 1981 | 6 | 0 |
| 1982 | 8 | 0 |
| 1983 | 5 | 0 |
| 1984 | 8 | 0 |
| 1985 | 11 | 0 |
| 1986 | 4 | 0 |
| 1987 | 11 | 0 |
| 1988 | 17 | 0 |
| 1989 | 17 | 0 |
| 1990 | 12 | 0 |
| 1991 | 21 | 0 |
| 1992 | 26 | 0 |
| 1993 | 22 | 0 |
| 1994 | 32 | 0 |
| 1995 | 17 | 0 |
| 1996 | 25 | 0 |
| 1997 | 21 | 0 |
| 1998 | 38 | 0 |
| 1999 | 29 | 0 |
| 2000 | 29 | 0 |
| 2001 | 16 | 3 |
| 2002 | 18 | 30 |
| 2003 | 32 | 37 |
| 2004 | 28 | 25 |
| 2005 | 21 | 23 |
| 2006 | 21 | 16 |
| 2007 | 17 | 27 |
| 2008 | 11 | 10 |
| 2009 | 16 | 18 |
| 2010 | 19 | 13 |
| 2011 | 12 | 10 |
| 2012 | 6 | 6 |
| 2013 | 10 | 10 |
| 2014 | 7 | 9 |
| 2015 | 9 | 13 |
| 2016 | 6 | 7 |
| 2017 | 14 | 18 |
| 2018 | 15 | 16 |
| 2019 | 22 | 38 |
| 2020 | 27 | 32 |
| 2021 | 23 | 36 |
| 2022 | 19 | 25 |
| 2023 | 28 | 32 |
| 2024 | 20 | 37 |
| 2025 | 16 | 15 |
| 2026 | 7 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Surface emitting laser apparatus and method for manufacturing the same19 May 2026US 12,633,723 B2Hlj Technology Co., Ltd.
- Semiconductor laser element and method of producing semiconductor laser element5 May 2026US 12,620,770 B2Sony Group Corporation
- Method of manufacturing vertical-cavity surface-emitting laser element14 Apr 2026US 12,603,479 B2Nichia Corporation
- Vertical-cavity surface-emitting laser (VCSEL) having separate electrical and optical confinement31 Mar 2026US 12,592,544 B2Mellanox Technologies, Ltd.
- Laser diode20 Jan 2026US 12,531,395 B2Asahi Kasei Kabushiki Kaisha
- Surface-emitting element20 Aug 2026US 2026/0246234 A1Sony Semiconductor Solutions Corporation
- Vcsel with tunable grating13 Aug 2026US 2026/0237968 A1Bandwidth10, LTD.
- Hcg tunable vcsel with fully oxidized bottom dbr (gaas based vcsel)13 Aug 2026US 2026/0237969 A1Bandwidth10, LTD.
- Flip chip tunable vcsel with hcg on si submount13 Aug 2026US 2026/0237970 A1Bandwidth10, LTD.
- Light emitting device30 Jul 2026US 2026/0221713 A1Sony Semiconductor Solutions Corporation
Most cited
By later US patents
- High performance gaas devices and method497US 5,436,499 ASpire Corporation · 1995
- Vertical cavity surface emitting laser device278US 7,483,466 B2Canon Kabushiki Kaisha · 2009
- Vertical-cavity surface-emitting lasers with intra-cavity structures163US 5,245,622 ABandgap Technology Corporation · 1993
- Optical device with low electrical and thermal resistance bragg reflectors134US 5,568,499 ASandia Corporation · 1996
- Integration of laser with photodiode for feedback control117US 5,606,572 AVixel Corporation · 1997