H01S 5/2072
Obtained by vacancy induced diffusion
Official title: {obtained by vacancy induced diffusion}
H01S5/2072 (Obtained by vacancy induced diffusion) appears on 75 US grants and 67 published applications in this corpus.
Search patents in H01S- Granted patents
- 75
- Published applications
- 67
- Assignees
- 58
- Inventors
- 158
- Latest grant
- 14 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 4 |
| 2003 | 4 | 2 |
| 2004 | 1 | 2 |
| 2005 | 2 | 6 |
| 2006 | 3 | 6 |
| 2007 | 2 | 4 |
| 2008 | 1 | 1 |
| 2009 | 3 | 2 |
| 2010 | 5 | 5 |
| 2011 | 2 | 2 |
| 2012 | 1 | 2 |
| 2013 | 4 | 2 |
| 2014 | 3 | 3 |
| 2015 | 0 | 2 |
| 2016 | 2 | 5 |
| 2017 | 3 | 1 |
| 2018 | 2 | 1 |
| 2019 | 3 | 3 |
| 2020 | 4 | 1 |
| 2021 | 0 | 5 |
| 2022 | 2 | 3 |
| 2023 | 1 | 3 |
| 2024 | 3 | 2 |
| 2025 | 0 | 0 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing vertical-cavity surface-emitting laser element14 Apr 2026US 12,603,479 B2Nichia Corporation
- Semiconductor laser element, testing method, and testing device1 Oct 2024US 12,107,393 B2Nuvoton Technology Corporation Japan
- Photonic crystal surface-emitting laser10 Sep 2024US 12,088,063 B2General Interface Solotion Limited
- Surface emitting laser and method of manufacturing the same5 Mar 2024US 11,923,661 B2Sony Semiconductor Solutions Corporation
- Semiconductor laser element, testing method, and testing device21 Nov 2023US 11,824,326 B2Nuvoton Technology Corporation Japan
- Method of manufacturing vertical-cavity surface-emitting laser element2 May 2024US 2024/0146025 A1Nichia Corporation
- Semiconductor laser element, testing method, and testing device15 Feb 2024US 2024/0055830 A1Nuvoton Technology Corporation Japan
- Vertical cavity surface emitting laser element, method of producing vertical cavity surface emitting laser element, and photoelectric conversion apparatus11 May 2023US 2023/0146906 A1Sony Semiconductor Solutions Corporation
- Semiconductor laser diode and method for producing a semiconductor laser diode2 Mar 2023US 2023/0063982 A1OSRAM Opto Semiconductors GmbH
- Photonic crystal surface-emitting laser9 Feb 2023US 2023/0044996 A1General Interface Solution Limited
Most cited
By later US patents
- Miniature structured light illuminator50US 9,553,423 B2Princeton Optronics, Inc. · 2017
- Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source42US 6,238,944 B1Xerox Corporation · 2001
- Buried lateral index guided lasers and lasers with lateral current blocking layers34US 7,526,007 B2Palo Alto Research Center Incorporated · 2009
- Transverse light emitting electroluminescent devices33US 4,309,670 AXerox Corporation · 1982
- Integrated tapered diode laser arrangement and method for producing it33US 7,885,302 B2OSRAM Opto Semiconductors GmbH · 2011