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US 6,238,944 B1Granted
Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source
AssigneeXerox Corporation
InventorPhilip D. Floyd
Life of this patent
Estimating the term…
Abstract
The barrier layers within a quantum well active region of a vertical cavity surface emitting laser can be silicon doped. Under thermal annealing, the silicon doped barrier layers will form disordered regions of the quantum well active region around the remaining non-disordered regions of the quantum well active region. The disordered regions of the quantum well active region will prevent diffusion of injected carriers from the non-disordered, light emitting quantum well active region.
Claims8
A method for forming a surface emitting laser including the steps of
- providing a substrate;
- depositing a plurality of semiconductor layers on said substrate, said plurality of semiconductor layers including;
- a lower mirror;
- and
- an active region having a plurality of alternating quantum well layers and barrier layers, said barrier layers being impurity doped for disordering;
- forming a capping mask upon a portion of the surface of said plurality of semiconductor layers;
- annealing said capped plurality of semiconductor layers to cause intermixing of a first region of said disordering barrier layers and said quantum well layers under the capping mask, while leaving a second region of said disordering barrier layers and said quantum well layers to remain unintermixed;
- etching said plurality of semiconductor layers to expose the edges of said plurality of semiconductor layers;
- and
- oxidizing one of said plurality of semiconductor layers to surround and form an aperture from said non-oxidized semiconductor layer;
- depositing an upper mirror;
- and
- depositing electrodes for passing current through said second region of unintermixed quantum well layers causing light emission from said second region of unintermixed quantum well layers through said aperture through said upper mirror.
10 more elements
A method for forming a surface emitting laser including the steps of
- providing a substrate;
- depositing a plurality of semiconductor layers on said substrate, said plurality of semiconductor layers including;
- a lower mirror, and
- an active region of a plurality of alternating quantum well layers and barrier layers, said barrier layers being impurity doped for disordering,
- forming a capping mask upon a portion of the surface of said plurality of semiconductor layers;
- annealing said capped plurality of semiconductor layers to cause intermixing of a first region of said disordering barrier layers and said quantum well layers under the capping mask, while leaving a second region of said disordering barrier layers and said quantum well layers to remain unintermixed;
- depositing an upper mirror,
- etching said plurality of semiconductor layers to expose the edges of said plurality of semiconductor layers;
- oxidizing one of said plurality of semiconductor layers to surround and form an aperture from said non-oxidized semiconductor layer,
- depositing electrodes for passing current through said second region of unintermixed quantum well layers causing light emission from said second region of unintermixed quantum well layers through said aperture through said upper mirror.
7 more elements
Dependencies are inferred from the claim text.