Integration of laser with photodiode for feedback control
AssigneeVixel Corporation
InventorsStanley E. Swirhun, William E. Quinn
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Abstract
Photodiodes are integrally formed with vertical cavity surface emitting lasers (VCSELs) and superluminescent light emitting diodes (SLEDs) for monitoring optical radiation intensities. In different embodiments, the photodiode is epitaxially formed within a mirror of a VCSEL, non-epitaxially formed on top of a VCSEL, non-epitaxially formed on side of a VCSEL, or formed on the substrate on the side opposite the VCSEL. A lateral injection vertical cavity surface emitting laser is also disclosed for integration with a lateral PIN photodiode. A photodiode having the same epitaxial layers as a VCSEL is also integrally formed alongside of the VCSEL. Similar devices using SLEDs are also disclosed.
Claims15
An integrated optoelectronic device comprising:
- a substrate;
- a surface light emitting device formed on the substrate, the surface light emitting device emitting optical radiation through an optical aperture;
- a photodiode formed on the surface light emitting device with an isolation layer therebetween;
- wherein the photodiode comprises materials having an energy bandgap equal to or smaller than the energy of the optical radiation, the photodiode intercepting an amount of the optical radiation sufficient to monitor optical output power of the surface light emitting device;
- and
- wherein the photodiode generates an electrical signal proportional to the optical output power.
An integrated optoelectronic device comprising:
- a substrate;
- a surface light emitting device formed on the substrate, the surface light emitting device emitting optical radiation through an optical aperture;
- a photodiode formed on the surface light emitting device with an isolation layer therebetween;
- wherein the photodiode comprising materials having an energy bandgap equal to or smaller than the energy of the optical radiation, the photodiode intercepting a portion of the optical radiation and generating a corresponding electrical signal;
- and
- wherein the photodiode is a PN photodiode comprising a P-type layer formed on the isolation layer and an N-type layer formed on the P-type layer, the P-type layer forming the anode of the PN photodiode.
An integrated optoelectronic device comprising:
- a substrate;
- a surface light emitting device formed on the substrate, the surface light emitting device emitting optical radiation through an optical aperture;
- a photodiode formed on the surface light emitting device with an isolation layer therebetween;
- wherein the photodiode comprising materials having an energy bandgap equal to or smaller than the energy of the optical radiation, the photodiode intercepting a portion of the optical radiation and generating a corresponding electrical signal;
- and
- wherein the surface light emitting diode comprises a first distributed Bragg reflector formed on the substrate and an active region formed on the reflector for generating the optical radiation formed over the reflector.
An integrated optoelectronic device comprising:
- a substrate;
- a surface light emitting device formed on the substrate, the surface light emitting device emitting optical radiation through an optical aperture;
- a photodiode formed on the surface light emitting device with an isolation layer therebetween;
- wherein the photodiode comprising materials having an energy bandgap equal to or smaller than the energy of the optical radiation, the photodiode intercepting a portion of the optical radiation and generating a corresponding electrical signal;
- wherein the surface light emitting device is a vertical cavity surface emitting laser (VCSEL) comprising a first mirror formed on the substrate, a second mirror parallel to the first mirror and forming with the first mirror an optical cavity, and an active region disposed between the mirrors, at least a first portion of the second mirror forming an anode of the VCSEL;
- and
- wherein the photodiode is a PN photodiode comprising a P-type layer formed on the isolation layer and an N-type layer formed on the P-type layer, the P-type layer forming an anode of the PN photodiode, the isolation layer formed between the anode of the VCSEL and the anode of the PN photodiode.
An integrated optoelectronic device comprising:
- a substrate having first and second opposing planar surfaces;
- a surface light emitting device formed on the first surface of the substrate, the surface light emitting device emitting optical radiation through an optical aperture;
- and
- a photodiode formed on the second surface of the substrate, the photodiode being aligned with the surface light emitting device to receive a portion of the emitted optical radiation which has traversed the substrate, the photodiode generating an electrical signal in response thereto.
Dependencies are inferred from the claim text.