H01S 5/2068
Obtained by radiation treatment or annealing
Official title: {obtained by radiation treatment or annealing}
H01S5/2068 (Obtained by radiation treatment or annealing) appears on 94 US grants and 80 published applications in this corpus.
Search patents in H01S- Granted patents
- 94
- Published applications
- 80
- Assignees
- 68
- Inventors
- 228
- Latest grant
- 14 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 5 | 0 |
| 2001 | 5 | 1 |
| 2002 | 2 | 11 |
| 2003 | 8 | 6 |
| 2004 | 4 | 2 |
| 2005 | 3 | 2 |
| 2006 | 2 | 2 |
| 2007 | 2 | 3 |
| 2008 | 1 | 1 |
| 2009 | 1 | 3 |
| 2010 | 1 | 1 |
| 2011 | 1 | 1 |
| 2012 | 0 | 1 |
| 2013 | 2 | 2 |
| 2014 | 0 | 1 |
| 2015 | 1 | 2 |
| 2016 | 2 | 1 |
| 2017 | 2 | 4 |
| 2018 | 2 | 2 |
| 2019 | 4 | 7 |
| 2020 | 4 | 7 |
| 2021 | 3 | 5 |
| 2022 | 3 | 3 |
| 2023 | 3 | 7 |
| 2024 | 4 | 5 |
| 2025 | 3 | 0 |
| 2026 | 3 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing vertical-cavity surface-emitting laser element14 Apr 2026US 12,603,479 B2Nichia Corporation
- Laser diode20 Jan 2026US 12,531,395 B2Asahi Kasei Kabushiki Kaisha
- Vertical cavity light-emitting element13 Jan 2026US 12,525,769 B2Stanley Electric Co., Ltd.
- Semiconductor optical device and method of manufacturing the same30 Dec 2025US 12,512,645 B2Sumitomo Electric Industries, Ltd.
- Laser chip and preparation method therefor25 Nov 2025US 12,483,004 B2Shenzhen Rubeust Technology Limited
- Heterogeneously integrated photonic platform with ingap layers7 Nov 2024US 2024/0372332 A1
- Iii-nitride-based devices grown on a thin template on thermally-decomposed material1 Aug 2024US 2024/0258771 A1The Regents of the University of California
- Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip16 May 2024US 2024/0162211 A1ams-OSRAM International GmbH
- Method of manufacturing vertical-cavity surface-emitting laser element2 May 2024US 2024/0146025 A1Nichia Corporation
- Laser Architectures Using Quantum Well Intermixing Techniques4 Apr 2024US 2024/0113508 A1Apple Inc.
Most cited
By later US patents
- Conductive element with lateral oxidation barrier115US 5,719,891 APicolight Incorporated · 1998
- Oxidizable semiconductor device having cavities which allow for improved oxidation of the semiconductor device54US 6,014,395 APicolight Incorporated · 2000
- Opto-electronic hybrid integration platform, optical sub-module, opto-electronic hybrid integration circuit and process for fabricating platform53US 5,621,837 ANippon Telegraph and Telephone Corporation · 1997
- Oxidizable semiconductor device having cavities which allow for improved oxidation of the semiconductor device49US 5,903,589 APicolight Incorporated · 1999
- Conductive element with lateral oxidation barrier43US 6,269,109 B1Picolight Incorporated · 2001